Aixtron has announced a production partnership with Rohm Semiconductor in which Rohm has chosen Aixtron's G10-GaN deposition ...
Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), the global leader in robust GaN power semiconductors, and Weltrend Semiconductor Inc. (TWSE: 2436), the global leader in adapter USB ...
Enphase chief product officer Raghu Belur about how gallium nitride technology is reshaping the company’s microinverter ...
New industrial-grade 650V GaN devices introduce multiple on-resistance options and package formats, helping engineers ...
SuperGaN-based SiP Family Now Includes Three Devices, Expanding Power Level Support for a Wider Range of Next Generation Adapters and Chargers The new SiPs—WT7162RHUG24B and WT7162RHUG24C—integrate ...
Weltrend announced its first GaN-based system-in-package integrating an AC/DC controller and Transphorm’s 240-mΩ, 650-V SuperGaN FET. The WT7162RHUG24A is intended for USB Type- C Power Delivery (PD) ...
The portfolio includes GaN field-effect transistors (FETs) spanning voltage ranges from 40V to 650V, alongside the company’s ...
Summary onsemi today announced the launch of GaNEXUS™, a new gallium nitride (GaN) power portfolio engineered to deliver higher efficiency, greater power density, and improved thermal performance ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the debut of the GaN Power Bench™, a suite of design tools to assist engineers in getting the optimal performance from their GaN-based designs. eGaN ...
Purpose-Built Isolated Gate Drivers Enable Rapid Adoption of Advanced GaN Semiconductors in Data Centers, Renewables, Electric Vehicles Transphorm’s SuperGaN FETs are designed to work in various ...
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